| Description |
The unique charge transport properties of quasi-one dimensional structures such as carbonnanotubes (CNTs) have become the center of interests for the next generation of nanoelectronic and optoelectronic devices. The energy band structure with direct transitions and bias dependent optical response of CNTs make them potential candidate to provide a common bridge for integration of electronic and nanoscale optical technology. This presentation will focus on interfacing nanotube optoelectronics into on-chip plasmonic circuitry. We have fabricated CNT based field effect transistors (CNTFET) on cover glass slide and realized the light emission from an individual device by electrical excitation (electroluminescence) process. We further demonstrate coupling of the emitted photons to surface plasmon polariton (SPP) in metal waveguides placed on the CNT channel, introducing thus an elegant route for an electrical source of SPP. The electroluminescence-coupled SPP in metal structure depends on bias voltages and orientation of SWNT with respect to metal structure. In addition, critical information about optical response of CNT addressed by propagating SPP in plasmonic waveguide will also be discussed.
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transistor”, Physical Review Letters 111, 026804 (2013).
2. A. Bouhelier, P. Rai, A. Hartschuh, and N. Hartmann “Carbon nanotube field effect transistor
based device for generating an electrically controlled plasmon”, French Patent No. 68269,
Nov 2012.
3. P. Rai, N. Hartmann, J. Berthelot, G. Colas-des-Francs, A. Hartschuh, and A. Bouhelier, “Inplane remote photoluminescence excitation of carbon nanotube by propagating surface plasmon”, Optics Letters 37, 4711 (2012).
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