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For more than 30 years now, Scanning Tunneling Microscopy (STM) and its related techniques stood for one of the utmost expertise in the art of characterizing the structural and electronic properties of
surfaces down to the atomic scale. Special interest has been on surface related defects like e.g. adatoms or adsorbates. In contrast to the huge amount of STM studies in surface science, this talk focuses on recent developments transferring scanning probe techniques to bulk systems. Using low temperature scanning tunneling spectroscopy and scanning tunneling potentiometry, a few longstanding topics in solid state are addressed: What are the structural and electronic properties of a metal‐semiconductor interface? What causes the electric resistivity on the atomic scale? Can we
access signatures of electron correlations of magnetic impurities from inside a metal? Constant Current
Constant Current Topography of two Fe atoms below the Cu (100) surface,
size: 4nm x 4nm, setpoint: ‐31mV, 0.2nA
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