Preparation and characterization of n-type and p-type ZnO thin films

Development of n and p type transparent conducting oxides (TCOs) will open up new and exciting applications. Among the various n-type TCOs, Ga doped zinc oxide (GZO) is attractive for various optoelectronics applications as it is exhibiting low resistivity (ρ), high carrier mobility (μ) and high visible to NIR transmittance. Since the properties of GZO are strongly depend on the deposition conditions, optimizing the parameters involved in the deposition process is a crucial factor. With this outlook the parameters are optimized for depositing n and p type ZnO thin films on glass substrates by spray pyrolysis technique. The structural, electrical, and optical properties of n-type GZO films will be discussed in the talk. To realize p-type ZnO films, Dual acceptor doping method is adopted in which Li and N are used as dual acceptors. The influence of concentration of Li-N on the structural, electrical, and optical properties of p-type (Li,N):ZnO films will be discussed in the presentation.