InAs nanowire resonators on sapphire substrate

InAs nanowires (NW) are of interest for high mobility field effect transistors and resonator devices. Insulating substratesare preferred due to its strongly reduced background and the measurements can be carried out at room temperature. However, charging effects during electron beam lithography limit the use of such substrates for device fabrication.  Here we have developed a simple technique that negates charging effects while patterning on such substrates. 

Transduction techniques, previously used for NEMS resonators use mixing schemes that are of lower bandwidth and hence the data acquisition is time consuming. Here we describe a measurement scheme that using the network analyzer with faster readout.

Both in-plane and out-of-plane vibrational modes of the nanowire are detected. Quality factor and non-linear response of the device are studied as a function of temperature.