Developments in novel III-V semiconductors for photonic device applications

This talk will discuss advances in semiconductor materials for applications in photonics. Focusing on III-V semiconductors, the talk will discuss current challenges in photonic devices and how new materials provide opportunities to improve current technology (e.g. through more efficient use of energy) or to develop new devices with improved functionality. Examples explored in the talk will be the new classes of III-Bi semiconductors, such as GaAsBi, GaAsBiN and InGaAsBi which offer opportunities to extend the operating wavelength of semiconductor lasers into the mid-infrared whilst growing on conventional substrates. It will also be shown how such alloys can be used to improve device efficiency and temperature stability. The talk will also discuss progress towards integrating photonics with electronics through the direct growth of III-V active materials on silicon. It will be shown that alloys, such as the dilute nitrides offer a route to achieve this important technological aim.