DCMPMS Seminars

Gate-tunable transport in the Al2O3/SrTiO3 interface two-dimensional electron gas

by Dr. Shamashis Sengupta (University of Paris-Sud, France)

Tuesday, November 24, 2015 from to (Asia/Kolkata)
at AG80
Description
In recent years, the two-dimensional electron gas (2DEG) at the interface of two insulating oxides has emerged as an exciting field of research. The most commonly studied system of this kind is LaAlO3/SrTiO3. It has exhibited a significant spin-orbit effect and gate-tunability of its transport characteristics, making it a novel nanoelectronics device platform. It is oming to light now that the phenomenon of a 2DEG is more general and extends to a broader class of SrTiO3-based systems. We will discuss the results of our experiments on the 2DEG in Al2O3/SrTiO3 where we observe a gate-controlled metal-insulator transition and signatures of weak anti-localization in magnetotransport.