Electronic Phase control by the electric field and electrostatic carrier doping in nominally pure and hole doped manganite system

The magnetite system especially La1-xCaxMnO3 shows coexistence of different electronic phases when the parent system LaMnO3 doped by divalent atoms at the rare earth position. Chemical doping generally introduces structural disorder as well as electronic inhomogenities in the system in an irreversible way which make it difficult to understand their electronic properties. Other than chemical doping, external electric field and electrostatic carrier doping can play a crucial role to perturb the electronic properties as well as electronic phase in manganites without creating any kind of disorder. Even without any external doping LaMnO3 can have an electronic inhomogeneous phase due to the phenomenon of charge disproportionation. The externally applied electric field can tune the charge disproportionation driven electronically inhomogeneous phase in single crystals of nominally pure LaMnO3 and a thin film of GdMnO3. This leads to a reversible resistive switching of nearly three orders at low as well as room temperature. Another aspect is that the effect of electrostatic carrier doping by electric double layer (EDL)  in hole doped manganites like La 0.85 Ca 0.15MnO3 as a channel in an EDL- FET device using  electrolyte as a gate dielectric..A bipolar control can be obtained on the transport in such EDL-FET device at room & low temperature. Electrostatic carrier modulation affects the electronic transport and modulated the electronic phases in this hole doped perovskite oxide system as the same way divalent atom substitution by chemical method or chemical doping does. There are many future prospects of electrostatic carrier modulation by EDL which can be used to study the electronic phenomena of strongly correlated oxides and other functional oxides.