Controlling light emission in two-dimensional semiconductors using off-resonant plasmonic effects

The light emission from lower dimensional semiconductors such as semiconductor quantum wells and 2D light emitters can be modified using off-resonant plasmonic interactions induced by metal nanostructures. The emission intensity, wavelength or the carrier recombination lifetime can be influenced by the electrostatic interaction in the absence of resonant electrodynamic coupling with the plasmonic channels. The competing effects of plasmonics and the image-charge field induced by the metal nanoparticles can result in the modification of the emission characteristics. Under resonant excitation, plasmoniccoupling dominate contributions due to electrostatics. The conditions that lead to these image-charge effects disrupting plasmoniccoupling and results in the quenching of photoemission will also be discussed. Specific materialsystems such as InGaN/GaN, GaAs/AlGaAs, MoS2 thin films or graphene oxide has been used for this study.