Atomic Orbital Overlap Engineering for 3D-2D Contacts & Record High-Performance 2D Transistors

Metal (3D) to graphene/TMD (2D) contact/interface has been considered one of the most fundamental challenges to harnessing the full potential of 2-dimensional materials such as graphene or 2D semiconductors. This talk will cover how the fundamental understanding of the contact’s quantum chemistry resulted in unique ways to engineer it. We have found that it can be addressed by engineering the atomic orbital’s overlap between the 3D and 2D systems. Different techniques to engineer and strengthen the atomic orbital overlap used to engineer metal – graphene/metal - TMD contacts will be presented, resulting in record low contact resistances and record-high transistor performance for graphene and several TMD channels.

About the Speaker:
Prof. Mayank Shrivastava is a faculty member at the Indian Institute of Science, Bangalore, and co-founder of AGNIT Semiconductors Pvt. Ltd. For his Ph.D. work, he received Excellence in Research Award and the Industrial Impact award from IIT Bombay in 2010. He is among the first recipients of the Indian section of the American TR35 award (2010) and the first Indian to receive IEEE EDS Early Career Award (2015). He is the recipient of the prestigious DST Swarnjayanti Fellowship (2021), VASVIK Award (2021), and Abdul Kalam Technology Innovation National Fellowship from INAE-SERB (2021). He has received several other national awards and honours of high repute, like the National Academy of Sciences, India (NASI) Young Scientist Platinum Jubilee Award – 2018; Indian National Academy of Science (INSA) Young Scientist Award – 2018; Indian National Academy of Engineering (INAE) Innovator Entrepreneur Award 2018 (Special commendation); Indian National Academy of Engineering (INAE) Young Engineer Award – 2017; INAE Young Associate (since 2017); Indian Academy of Sciences (IASc), Young Associate, 2018 – 2023; Ministry of Electronics & Information Technology (MeitY), Young Faculty Fellowship. Besides, he received best paper awards from several international conferences like Intel Corporation Asia academic forum, VLSI design Conference and EOSESD Symposium. Prof Shrivastava broadly works on applications of emerging materials like Gallium Nitride (GaN), atomically thin two-dimensional materials like Graphene and TMDCs, in electronic and electro-optic devices working closer to its fundamental limits (like the ability to handle extreme powers, ability to work at THz like ultra-high frequencies, or ability to compute information in unconventional ways). Currently, his group is developing few-atom thick devices & circuits, GaN-based ultra-high-power devices with high reliability, and devices/circuits for operation at THz frequencies. He held visiting positions in Infineon Technologies, Munich, Germany, from April 2008 to October 2008 and from May 2010 to July 2010. He worked for Infineon Technologies, East Fishkill, NY, USA; IBM Microelectronics, Burlington, VT, USA; Intel Mobile Communications, Hopewell Junction, NY, USA; Intel Corp, Mobile and Communications Group, Munich, Germany between 2010 and 2013. He joined the Indian Institute of Science as a faculty member in 2013. Prof Shrivastava’s work has resulted in over 175 peer-reviewed publications and ~50 patents. Most of these patents are either licensed by semiconductor companies or are in use in their products.