Synthesis, Characterization and Field Electron Emission behavior of Topological Insulators

Field emitters offer unprecedented advantages over the thermionic cathodes in terms of high brightness, low energy spread, and less power consumption. With the advent of Carbon Nanotubes (CNTs), followed by Graphene, innumerable 1D and 2D nanostructures have been extensively investigated for their Field Electron Emission (FEE) characteristics. Despite this fact, there is unceasing quest to explore newer materials (nanostructures) possessing excellent FEE characteristics and/or improve the FEE performance of prevailing nanostructures. In this context, there are very few studies on the Topological Insulators. TIs are the most exotic quantum materials in recent years, because of the highly conducting states present on the surface, with insulating bulk. TI compounds exhibit electronic structure analogous to graphene. Therefore, TIs have received a great attention towards FEE application due to its most interesting electronic properties, atomic thick sharp edges offering high aspect ratio. The TIs, owing to robust surface conducting states, are expected to exhibit enhanced FEE behavior. As field electron emission is a surface sensitive phenomenon, the conducting states present on surface will play a vital role in deciding their FEE characteristics. Moreover, owing to 2D layered structures, one can expect ‘high aspect ratio’ in case of micro- nanostructures of TIs. In addition, facile, low-cost, and ecofriendly methods need to explored for synthesis of TIs micro-nanostructures.