MOVPE Growth of InGaN QDs on GaN

High efficiency green light emitting diodes and hence white light sources are currently one of the most important challenges in the semiconductor research community. InGaN/GaN quantum well hetero-structures with high indium content are being used as the active region for these light emitters. However, significant lattice mismatch between InGaN and GaN degrades the emission efficiency. We
have investigated the growth mechanism of InGaN quantum dots on GaN in the green wavelength range using metalorganic vapour phase epitaxy in a temperature range of 600°C to 800°C in a horizontal reactor . We have successfully grown InGaN quantum dots on GaN in Stranski ?Krastanov growth mode with typical dot density ~10^10 cm^-2, average diameter ~ 40nm and average height with ~1.4nm. Strong green emission at 534 nm was observed from InGaN epilayers grown at 675°C. In this seminar I will discuss the growth mechanism and preliminary optical analysis of InGaN QDs on GaN buffer layer.