Infrared Imagers based on Type-II InAs/GaSb/AlSb Superlattice System

Infrared imagers offer the most sensitive thermometric imaging of objects at room temperature. The field of infrared detection and imaging, traditionally reserved for military and space applications, is on the verge of experiencing an expansive growth, driven by 
civilian applications, such as, biomedical imaging, night-vision for surveillance and automobile navigation. Type-II InAs/GaSb Strained Layer Superlattice (T2SL) based infrared detectors technology is emerging as a viable alternative to the much more expensive, incumbent technology based on Mercury-Cadmium-Telluride (MCT) material system. 
T2SL have been theoretically predicted to outperform MCTs. However, a lot of research in the physical understanding and detector designs of T2SL is needed to achieve their predicted potential. 

This talk will focus on the molecular beam epitaxy (MBE) growth optimization, and heterojunction barrier engineering of T2SL, in midwave infrared (MWIR) and longwave infrared (LWIR) regimes. I will also give a brief overview of steps from epitaxial growth and material characterization to device fabrication and characterization, and finally focal plane array (FPA) fabrication. I will also discuss key concepts in heterostructure designs to optimize the performance.