DCMPMS Seminars

Ga2O3: Properties and Prospects

by Dr. D. Krishnamurthy (SHANAN Innovetek Ventures, Chennai, (Former Senior Researcher, National Institute of Information and Communication Technology, Tokyo, Japan))

Tuesday, June 13, 2017 from to (Asia/Kolkata)
at AG80
Description
Ga2O3has been attracting research interest as a promising wide bandgap semiconductor material for several years owing to its excellent material properties for applications in high power and high voltage electronics. However, ever since Tamura Co. Ltd, Japan made commerciallyavailable large-size, high-quality Ga2O3wafers (manufacturing them from a single-crystal bulk synthesized by melt–growth methods) [1], the research activities on Ga2O3 based LEDs and power devices have really taken off in the recent years.Tamura and Koha Co. Ltd demonstrated nitride white LEDs on Gallium Oxide substrates in 2013. This coupled with the first demonstration of MESFETs [2] and MOSFETs [3] by Higashiwaki et al of NICT, Japan,attracted tremendous attention paving way for world-wide research start-ups. The researchers working on this material believe it to be very much suitable for extreme environment applications. Of course, the issue of poor thermal conductivity needs to be addressed. The speaker will present the salient features of the Ga2O3 substrates and epi-wafers produced by Tamura Co.,(by MBE and HVPE) along with an overview of the current research activities based on Ga2O3substrates. The epitaxialgrowth of crystalline Al2O3 interlayer on β-Ga2O3 (010) by ALD and its influence on the suppression of the interface trap density will also be discussed [4].

1.	“US patent- US 20140352604 A1”, “Method for growing β-Ga2O3 single crystal”, Tamura Corporation, Koha Co., Ltd., Japan,
2.	Higashiwaki et al, “Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates”, Appl. Phys. Lett. 100, 013504 (2012)
3.	Higashiwaki et al, “Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics”, Appl. Phys. Lett. 103, 123511 (2013)
4.	T. Kamimura, D. Krishnamurthy et al, “Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density”, Jap. J of Applied Physics 55, 1202B5 (2016)

Dr. Daivasigamani Krishnamurthy obtained his Ph.D. degree in materials science in  1996 at the Crystal Growth Centre, Anna University, Chennai. Then he was pursuing his research career at various universities, companies and institutesin Japan for the past sixteen years. Recently, he has started a small technical consultancy in Chennai.