DCMPMS Seminars

Insights into Novel Group IV Semiconductors – From Isotopically Engineered Materials to Non-Equilibrium Alloys

by Dr. Samik Mukherjee (Polytechnique Montreal, Department of Engineering Physics, Montreal, Canada)

Thursday, January 10, 2019 from to (Asia/Kolkata)
at AG80
Description
Isotopes of an element differ in the number of neutrons in the nucleus which creates differences in the lattice dynamics and nuclear properties between the isotopes. Consequently, the introduction of stable isotopes adds an additional degree of complexity in the growth of semiconductor films and quantum structures providing a wealth of opportunities to manipulate their basic properties, design an entirely new class of devices, and highlight subtle but important nanoscale and quantum phenomena [1-8]. In the first part of this presentation, I will outline the recent progress in this particular area of isotopically engineering group IV semiconductors with focus on nanoscale and quantum structures and devices. Emphasis will be laid on Si-based quantum information processing, phononic devices, and optical spectroscopy, to name a few. The atomistic-level investigations of isotopically programmed nanoscale materials will be presented based on laser-assisted atom probe tomography. In the second part of the talk, I will focus on prospect of monolithic integration of optoelectronic devices on Si-platform using Sn-rich group-IV metastable alloys. Such integration is a long-sought-after paradigm which holds the key to a myriad of opportunities in ultrafast data transfer, low-power electronics, energy conversion, and sensing, to name a few [9-11]. Recent results related to the growth and atomistic-level characterization of GeSn and SiGeSn alloys shall be highlighted in the talk [12-13]. 

References 
[1] M. Cardona et al., Rev. Moden Phys. 77, 1173 (2005). 
[2] S. Simmons et al., Nature 470, 69 (2011). 
[3] M. Hu et al., M. Phys. Rev. B 67, 113306 (2003). 
[4] V. I. Ozhogin et al., J. Exp. Theor. Phys. Lett. 63, 490 (1996). 
[5] O. Moutanabbir et al., Phys. Rev. Lett. 105, 026101 (2010) 
[6] S. Mukherjee et al., Nano Letters 15, 3885 (2015). 
[7] S. Mukherjee et al., Nano Letters, 18, 3066 (2018). 
[8] S. Mukherjee et al., Nano Letters 16, 1335 (2016). 
[9] S. Wirths, et al., Nat. Photonics 9 (2), 88–92 (2015). 
[10] J. Aubin, et al., Semicond. Sci. Technol. 32 (9), 94006 (2017). 
[11] J. Margetis, et al., Mater. Sci. Semicond. Process. 70, 38–43 (2017). 
[12] S. Assali, et al., Applied Physics Letters, 112, 251903, (2018) 
[13] S. Mukherjee, et al., Phys. Rev.B 95(16), 161402 (2017).