Postdoc Presentation on Previous Scientific Experience and Research Interest

During PhD I have worked on the development of Ge based metal oxide semiconductor (MOS) devices for CMOS technology applications. Wherein, the different stacks based on the rare earth elements such as La 2 O 3, CeO 2 and transitions metal oxides such as HfO 2, ZrO 2 was used as the high-k dielectrics. The homemade atomic layer deposition was used to grow these dielectric layers. The main aim was to check the suitability of these different gate stacks for the advance CMOS devices. The first part of the presentation discusses the experimental details and results achieved during PhD. Since, August 2019 I have been working at Information and Communication Device Laboratory (ICDL), Sungkyunkwan University, South Korea, where I got an opportunity to start the work on thin film transistors used as back plain devices in displays as a part of Samsung company project sanctioned to my postdoc adviser. Basically, there are two types of TFTs used in displays one is low temperature polycrystalline (LTPS) TFTs and another one oxide (Indium Gallium Zink Oxide-IGZO) based TFTs. The main aim was to study the different degradation mechanisms in these devices. Another project I have been working was to design and develop the different NVM memory stacks and study their retention properties. The high-k materials were used as the charge storage layer within the memory gate stack. Therefore, the details of developed devices and results achieved so far have been included within the second part of the presentation.