DCMPMS Seminars

Raman scattering characterization of tetrahedral semiconductors

by Prof. Kailash Rustagi

Wednesday, September 20, 2023 from to (Asia/Kolkata)
at AG 80
The tutorial talk aims to illustrate the use of Raman Scattering in characterizing tetrahedral semiconductors using various examples. Basic ideas from the following papers will be covered.
Weber WJ. New bond-charge model for the lattice dynamics of diamond-type semiconductors. Physical Review Letters. 1974 Aug 5;33(6):371.
Weber W. Adiabatic bond charge model for the phonons in diamond, Si, Ge, and α− Sn. Physical Review B. 1977 May 15;15(10):4789.
Rustagi KC, Weber W. Adiabatic bond charge model for the phonons in A3B5 semiconductors. Solid State Communications. 1976 Jan 1;18(6):673-5.
Weber W, Go S, Rustagi KC, Bilz H. Bond-Charge Model for Phonons in Semiconductors and its Application to Infrared and Raman Spectra. In Proceedings of the Twelfth International Conference on the Physics of Semiconductors: July 15–19, 1974 Stuttgart 1974 (pp. 194-198). Vieweg+ Teubner Verlag.
Ingale A, Rustagi KC. Raman spectra of semiconductor nanoparticles: disorder-activated phonons. Physical Review B. 1998 Sep 15;58(11):7197.
Ganguli T, Ingale A. Raman and photoluminescence investigations of disorder in ZnSe films deposited on n-GaAs. Physical Review B. 1999 Oct 15;60(16):11618.
Pagès O, Ajjoun M, Tite T, Bormann D, Tournié E, Rustagi KC. Long-wave phonons in ZnSe− BeSe mixed crystals: Raman scattering and percolation model. Physical Review B. 2004 Oct 21;70(15):155319.
Pagès O, Souhabi J, Torres VJ, Postnikov AV, Rustagi KC. Re-examination of the SiGe Raman spectra: Percolation/one-dimensional-cluster scheme and ab initio calculations. Physical Review B. 2012 Jul 5;86(4):045201.